Postdoc: Ptychography with extreme ultraviolet light

Postdoc: Ptychography with extreme ultraviolet light

Published Deadline Location
27 Feb 26 Aug Amsterdam

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Job description

As a postdoc you will develop new methods for high-resolution of nanoscale objects using extreme ultraviolet light. Your research will involve lensless imaging experiments with a high-harmonic generation source, and image reconstruction from diffraction data using advanced concepts such as ptychography.

Research / Job description

The ability to perform high-resolution imaging with extreme ultraviolet (EUV) radiation provides exciting possibilities in science and technology. Especially for characterizing nanostructures in modern computer chips with sub-20-nm feature size, EUV microscopy is a promising new tool. While lens-based imaging is challenging at EUV wavelengths, lensless imaging methods based on coherent diffraction form a versatile and powerful solution.

In this project we use coherent EUV radiation from a high-harmonic generation (HHG) source, combined with coherent imaging techniques such as ptychography, to perform high-resolution imaging on semiconductor nanostructures. We aim to advance technology to enable nanoscale 3D imaging, and spatially map the elemental composition of nanostructures.

As a postdoc, your research will be aimed towards developing efficient high-resolution imaging with broadband HHG sources. You will join an active research team, working on advancing HHG source technology, optimizing HHG-based imaging, developing new ptychography algorithms, and applications towards imaging of nanostructures. Depending on your interests and expertise, your main research focus can be towards any (combination) of these aspects.




You have a PhD-degree in Physics or Technical/Applied Physics (or a similar subject), with experience in any (or multiple) of the following subjects: high-harmonic generation, ptychography, coherent imaging, ultrafast lasers,, and experiments involving EUV radiation. Affinity for working with lasers and optics experiments, and/or programming and algorithm development are considered important. Good verbal and written communication skills (in English) are required.

Conditions of employment

The position is intended as full-time appointment in the service of NWO-I, with a duration of up to three years. For applicants from abroad, ARCNL can assist with visa applications and can help arrange suitable housing in Amsterdam.


EUV Generation & Imaging

The EUV Generation and Imaging group at ARCNL focuses on the development and application of advanced imaging and ultrafast laser technology, in particular lensless imaging with HHG sources, with the aim to visualize and study micro- and nanoscale structures with unprecedented detail and contrast.

The Advanced Research Center for Nano-Lithography (ARCNL) focuses on the fundamental physics involved in current and future key technologies in nano-lithography, primarily for the semiconductor industry. ARCNL is a public-private partnership between the Netherlands Organisation for Scientific Research (NWO), the University of Amsterdam (UvA), the VU University Amsterdam (VU) and the semiconductor equipment manufacturer ASML. ARCNL is located at the Science Park Amsterdam in The Netherlands and currently houses approximately 90 scientists and support staff.



  • Postdoc
  • 1206378


Science Park 106, 1098 XG, Amsterdam

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