PhD-student: Superresolution terahertz microscopy of semiconductors and 2D materials

PhD-student: Superresolution terahertz microscopy of semiconductors and 2D materials

Published Deadline Location
6 Jun 3 Dec Amsterdam

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Job description

In this project you will work on expanding our capabilities to perform optical metrology in the terahertz spectral range, by helping to design, build and apply a terahertz time-domain spectroscopy microscope. The microscope will use femtosecond lasers to generate and detect terahertz pulses using non-linear optical techniques. You will then apply the THz microscope to measure and understand the conductivity of 2D and 3D materials on the micrometer and nanometer scale. In one planned mode of operation the THz microscope will be used in combination with a camera, to take THz pictures with several micrometers spatial resolution in a single laser shot.

The proposed work is part of a national (nano) metrology project, financed by a NXTGEN HIGHTECH Groeifonds grant.

 

Specifications

ARCNL

Requirements

You will need to meet the requirements for an MSc-degree, to ensure eligibility for a Dutch PhD examination. A degree in physics, physical chemistry, or a closely related subject is required for this project.

You have to enjoy working with optics and ultrafast lasers and have some affinity with electronics. If you have experience with one or more of the following topics: femtosecond lasers - coherent terahertz generation and detection - nonlinear optics, this is considered an advantage.

Very good verbal and written communications skills (in English) are required.

Conditions of employment

The position is intended as full-time (40 hours / week, 12 months / year) appointment in the service of the Netherlands Foundation of Scientific Research Institutes (NWO-I) for the duration of four years, with a starting salary of gross € 2,590 per month and a range of employment benefits. After successful completion of the PhD research a PhD degree will be granted at the University of Amsterdam (UVA) . Several courses are offered, specially developed for PhD-students. ARCNL assists any new foreign PhD-student with housing and visa applications and compensates their transport costs and furnishing expenses.

A favorable tax agreement, the ‘30% ruling’, may apply to non-Dutch applicants.

Department

Light-Matter Interaction

The Light/Matter Interaction group focuses on developing the science and technology of new optical and optical/acoustic hybrid metrology modalities for nanolithography applications. Projects include ultra-high frequency photoacoustics for metrology, Thz emission spectroscopy, understanding laser damage in semiconductor-industry-relevant materials, and, in this project, THz imaging science and technology for measuring

micrometer- and nanometer-scale conductivity in semiconductors and 2D materials. The group possesses various femtosecond laser systems and is currently in the process of acquiring an additional, new femtosecond laser to be used in this project.

 

The group houses state-of-the-art lab facilities at the Advanced Research Center for Nanolithography (ARCNL). The Advanced Research Center for Nanolithography (ARCNL) focuses on the fundamental physics and chemistry involved in current and future key technologies in nanolithography, primarily for the semiconductor industry. ARCNL is a public-private partnership between the Dutch Research Council (NWO), the University of Amsterdam (UvA), the VU University Amsterdam (VU) and the semiconductor equipment manufacturer ASML. ARCNL is located at the Science Park Amsterdam, The Netherlands, and is currently housing about

100 scientists and support staff. We offer a dynamic and open environment, and aim to provide the optimum conditions for young scientists to do exciting research leading to high-impact results, which focus on fundamental physics and chemistry challenges, and might also have direct technological relevance.

Specifications

  • PhD
  • max. 40 hours per week
  • 1211263

Location

Science Park 106, 1098 XG, Amsterdam

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